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| FDS6676AS 30V N-Channel PowerTrench(R) SyncFETTM April 2005 FDS6676AS 30V N-Channel PowerTrench(R) SyncFETTM Features 14.5 A, 30 V. RDS(ON) max= 6.0 m @ VGS = 10 V RDS(ON) max= 7.25 m @ VGS = 4.5 V Includes SyncFET Schottky body diode Low gate charge (45nC typical) High performance trench technology for extremely low RDS(ON) and fast switching High power and current handling capability General Description The FDS6676AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6676AS includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. Applications DC/DC converter Low side notebook D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings TA = 25C unless otherwise noted Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG RJA RJC Operating and Storage Junction Temperature Range (Note 1a) Parameter Ratings 30 20 14.5 50 2.5 1.2 1 -55 to +150 Units V V A W C C/W C/W Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 Package Marking and Ordering Information Device Marking FDS6676AS FDS6676AS Device FDS6676AS FDS6676AS_NL (Note 3) Reel Size 13'' 13'' Tape width 12mm 12mm Quantity 2500 units 2500 units (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDS6676AS Rev. A (X) FDS6676AS 30V N-Channel PowerTrench(R) SyncFETTM Electrical Characteristics TA = 25C unless otherwise noted Symbol Off Characteristics BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on) Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage VGS = 0 V, ID = 1 mA ID = 1 mA, Referenced to 25C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = VGS, ID = 1 mA ID = 1 mA, Referenced to 25C VGS = 10 V, ID = 14.5 A VGS = 4.5 V, ID = 13.2 A VGS = 10 V, ID = 14.5A, TJ = 125C VGS = 10 V, VDS = 5 V VDS = 10 V, ID = 14.5 A VDS = 15 V, VGS = 0 V, f = 1.0 MHz 50 66 1 1.5 -3.3 4.9 5.9 6.7 6.0 7.25 8.5 30 28 500 100 3 V mV/C A nA Parameter Test Conditions Min Typ Max Units On Characteristics (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance V mV/C m ID(on) gFS Ciss Coss Crss RG td(on) tr td(off) tf td(on) tr td(off) tf Qg(TOT) Qg Qgs Qgd A S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS = 15 mV, f = 1.0 MHz VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 2510 710 270 1.6 pF pF pF 20 22 69 46 31 35 54 46 63 35 ns ns ns ns ns ns ns ns nC nC nC nC Switching Characteristics (Note 2) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge at Vgs=10V Total Gate Charge at Vgs=5V Gate-Source Charge Gate-Drain Charge VDD = 15 V, ID = 14.5 A, VDD = 15 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 10 12 43 29 17 22 34 29 45 25 7 8 2 FDS6676AS Rev. A (X) www.fairchildsemi.com FDS6676AS 30V N-Channel PowerTrench(R) SyncFETTM Electrical Characteristics TA = 25C unless otherwise noted (Continued) Symbol VSD trr IRM Qrr Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50/W when mounted on a 1 in2 pad of 2 oz copper b) 105/W when mounted on a .04 in2 pad of 2 oz copper c) 125/W when mounted on a minimum pad. See "SyncFET Schottky body diode characteristics" below Parameter Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Current Diode Reverse Recovery Charge Test Conditions VGS = 0 V, IS = 3.5 A VGS = 0 V, IS = 7 A IF = 14.5A, diF/dt = 300 A/s (Note 2) (Note 2) Min Typ 0.4 0.5 27 Max 0.7 Units V nS A nC Drain-Source Diode Characteristics and Maximum Ratings (Note 3) 1.9 26 Scale 1 : 1 on letter size paper 2. 3. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDS6676AS_NL is a lead free product. The FDS6676AS_NL marking will appear on the reel label. 3 FDS6676AS Rev. A (X) www.fairchildsemi.com FDS6676AS 30V N-Channel PowerTrench(R) SyncFETTM Typical Characteristics 50 VGS = 10V 3.5V 2.4 RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2 2 1.8 1.6 40 VGS = 3.0V ID, DRAIN CURRENT (A) 6.0V 4.5V 3.0V 30 3.5V 1.4 4.0V 1.2 1 0.8 4.5V 6.0V 10V 20 10 2.5V 0 0 0.25 0.5 0.75 VDS , DRAIN-SOURCE VOLTAGE (V) 1 0 10 20 30 ID, DRAIN CURRENT (A) 40 50 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.016 1.4 I D = 14.5A VGS =10V 1.2 ID = 7.3 A RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), ON-RESISTANCE (OHM) 0.014 0.012 1 0.01 TA = 125 C 0.008 0.8 0.006 TA = 25C 0.6 -55 0.004 -35 -15 5 25 45 65 o 85 C) 105 125 2 T J, JUNCTION TEMPERATURE ( 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 50 V DS = 5V 100 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. VGS = 0V IS , REVERSE DRAIN CURRENT (A) 40 10 I D, DRAIN CURRENT (A) 30 TA = 125 C 20 25C 10 -55C 1 TA = 125C 25C 0.1 -55C 0.01 0 1 1.5 2 2.5 3 3.5 V GS, GATE TO SOURCE VOLTAGE (V) 0.001 0 0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 4 FDS6676AS Rev. A (X) www.fairchildsemi.com FDS6676AS 30V N-Channel PowerTrench(R) SyncFETTM Typical Characteristics 10 I D = 14.5A 3500 3000 VDS = 10V 20V 6 15V 4 2500 Ciss 2000 1500 Coss 1000 500 Crss 0 0 10 20 30 40 50 Q g, GATE CHARGE (nC) 0 0 5 10 15 20 VDS , DRAIN TO SOURCE VOLTAGE (V) 25 30 f = 1MHz VGS = 0 V VGS , GATE-SOURCE VOLTAGE (V) 8 2 Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 100s 1ms 10ms 100ms 1s 50 CAPACITANCE (pF) Figure 8. Capacitance Characteristics. 40 ID, DRAIN CURRENT (A) 10 SINGLE PULSE R JA = 125C/W TA = 25C 30 1 10s DC 20 0.1 VGS = 10V SINGLE PULSE R JA = 125 C/W T A = 25C 10 0.01 0.01 0.1 1 10 100 0 0.001 0.01 0.1 1 t1 , TIME (sec) 10 100 1000 V DS , DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 R JC(t) = r(t) * R JC R JC = 125 C/W 0.1 0.1 0.05 0.02 P(pk) 0.01 0.01 SINGLE PULSE t1 t2 T J - T C = P * R JC (t) Duty Cycle, D = t 1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6676AS Rev A (X) 5 FDS6676AS Rev. A (X) www.fairchildsemi.com FDS6676AS 30V N-Channel PowerTrench(R) SyncFETTM Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS6676AS. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 0.1 I DSS, REVERSE LEAKAGE CURRENT (A) TA = 125 C 0.01 0.001 TA = 100 C 0.8A/DIV 0.0001 TA = 25 C 0.00001 0 5 10 15 20 25 30 VDS , REVERSE VOLTAGE (V) Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature. 10nS/DIV Figure 12. FDS6676AS SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6676). 0.8A/DIV 10nS/DIV Figure 13. Non-SyncFET (FDS6676) body diode reverse recovery characteristic. 6 FDS6676AS Rev. A (X) www.fairchildsemi.com FDS6676AS 30V N-Channel PowerTrench(R) SyncFETTM Typical Characteristics VDS VGS RGE 0V L BVDSS tP DUT + VDD VDS IAS VDD - tp VGS IAS 0.01 vary tP to obtain required peak IAS tAV Figure 15. Unclamped Inductive Load Test Circuit Drain Current Same type as Figure 16. Unclamped Inductive Waveforms + 10V 50k 10 F 1F - + VDD - VGS DUT VGS Ig(REF) QGS 10V QG(TOT) QGD Charge, (nC) Figure 17. Gate Charge Test Circuit Figure 18. Gate Charge Waveform tON tOFF td(OFF) tf VDS VGS RGEN RL VDS td(ON) 90% tr 90% + DUT VDD 0V 10% 90% 10% - VGS VGS Pulse Width 1s Duty Cycle 0.1% 50% 0V 10% 50% Pulse Width Figure 19. Switching Time Test Circuit Figure 19. Switching Time Waveforms 7 FDS6676AS Rev. A (X) www.fairchildsemi.com FDS6676AS 30V N-Channel PowerTrench(R) SyncFETTM TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM Across the board. Around the world.TM OPTOLOGIC OPTOPLANARTM The Power Franchise PACMANTM Programmable Active DroopTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 8 FDS6676AS Rev. A (X) www.fairchildsemi.com |
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